ATF-501P8

Features:

• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm³
• Point MTTF > 300 years^[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available




Application

• Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/ RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications




Specifications

Symbol	Parameter	Units	Absolute Maximum
VDS	DrainSource Voltage[2]	V	7
VGS	GateSource Voltage[2]	V	-5 to 0.8
VGD	Gate Drain Voltage[2]	V	-5 to 1
IDS	Drain Current[2]	A	1
IGS	Gate Current	mA	12
Pdiss	Total Power Dissipation[3]	W	3.5
Pin max.	RF Input Power	dBm	30
TCH	Channel Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150
ch_b	Thermal Resistance[4]	°C/W	23

Notes:
1. Operation of this device in excess of any one of these parameters may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C. Derate 43.5 mW/°C for T_B > 69.5°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.




Description

The ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 3.9 GHz frequency range.

Agilent Technologies's ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC^[3]) package. The device is ideal as a mediumpower amplifier. Its operating frequency range is from 400 MHz to 3.9 GHz.

The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device ATF-501P8 has a Point MTTF of over 300 years at a mounting temperature of +85. All devices are 100% RF & DC tested.