Purchase ATF-501P8, In-stock ATF-501P8 From SeekIC.
MFG:AGILENT D/C:08+
Part Number: ATF-501P8
MFG: AGILENT
D/C: 08+
Description: Agilent Technologies's ATF- 501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8...
- Table of contents:
ATF-501P8
-
Suppliers
DataSheet
General Description
ATF-501P8 General Description
Agilent Technologies's ATF- 501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a mediumpower amplifier. Its operating frequency range is from 400 MHz to 3.9 GHz.
The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85. All devices are 100% RF & DC tested.
ATF-501P8 Maximum Ratings
| Symbol | Parameter | Units | Absolute Maximum |
| VDS | DrainSource Voltage[2] | V | 7 |
| VGS | GateSource Voltage[2] | V | -5 to 0.8 |
| VGD | Gate Drain Voltage[2] | V | -5 to 1 |
| IDS | Drain Current[2] | A | 1 |
| IGS | Gate Current | mA | 12 |
| Pdiss | Total Power Dissipation[3] | W | 3.5 |
| Pin max. | RF Input Power | dBm | 30 |
| TCH | Channel Temperature | °C | 150 |
| TSTG | Storage Temperature | °C | -65 to 150 |
| ch_b | Thermal Resistance[4] | °C/W | 23 |
1. Operation of this device in excess of any one of these parameters may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C. Derate 43.5 mW/°C for TB > 69.5°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
ATF-501P8 Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
ATF-501P8 Typical Application
• Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/ RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications
• Driver Amplifier for WLAN, WLL/ RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications
ATF-501P8-BLK
PDF/DataSheet Download
- Datasheet: ATF-501P8-BLK
- File Size: 188582 KB
- Manufacturer: HP [Agilent(Hewlett-Packard)]
- Click here to Download
- ·ATF10100
- Agilent(Hewlett-Packard)
- 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
- 44359 KB
- ·ATF-10100
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 53132 KB
- ·ATF-10100-GP3
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 53132 KB
- ·ATF10136
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136-STR
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF-10136-TR1
- HP [Agilent(Hewlett-Packard)]
- 0.5-12 GHz Low Noise Gallium Arsenide FET
- 48003 KB
- ·ATF10170
- TRANSISTOR | JFET | N-CHANNEL | 70MA I(DSS) | MICRO-X
- 97889 KB
ATF-501P8 Relative Products
ATF-50189-TR1
IC PHEMT 2GHZ 4.5V 280MA SOT-89
ATF-50189-BLK
IC PHEMT 2GHZ 4.5V 280MA SOT-89
ATF-50189
Avago Technologies's ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in low cost surface mount SOT-89 package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmit...
ATF-46171
The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5Êmicron gate length GaAs FET is an interdigitated four-cell structur...
ATF-46101
The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5Êmicron gate length GaAs FET is an interdigitated four-cell structur...
ATF-45171
The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using...
Hotspot Suppliers Product
89E516RD2-40-C-NJE
Price: 2.5-3.3 USD
microcontroller, PLCC, -0.5V to +14.0V
HMC484MS8G
Price: 5-8 USD
GaAs MMIC, 10 watt, T/R switch DC, SOP, 1.6 W, +13 Vdc, +40 dBm
XC4VLX100-11FFG1148C
Price: 50-66 USD
FPGA, BGA, –0.95 to 4.4V, ±100 mA, Pb-Free, Optional pipeline stages
EP3C10E144C8N
Price: 14.6-15 USD
Thermal Resistance, QFP, -0.5V to 1.8V, EP3C10E144C8N
SMJ27C512-25JM
Price: 11-12 USD
8-bit (524,288-bit), ultraviolet (UV) light erasable, electrically programmable read-only memories
VHFD29-12IO1
Price: 60-63 USD
Half Controlled Single Phase Rectifier Bridge, MODULE, 28 A, Planar passivated chips
pka2323
Price: 0.01-0.02 USD
25–40 W DC/DC Power Module, IGBT, –0.5 to 36Vdc, 1.3 Ws, Single, dual and triple output
7MBR50SB120
Price: 1-1 USD
IGBT module, Low VCE(sat), 1200V, 75A, 360W, Converter diode bridge, Compact package
LQ035Q7DB02
Price: 40-50 USD
LCD module, color reflective, active matrix, Thin Film Transistor, 53.64(H)×71.52(V) mm, -0.3 to ...
T6963C
Price: 1.5-2 USD
T6963C LCD Graphics Controller Chip
K6T1008C2E-TB70
Price: 1-3 USD
128Kx8 bit, Low Power CMOS Static RAM, Low Data Retention Voltage, 2mV, 32-TSOP
G6B-2114P-US-DC12V
Price: 0.8-1.5 USD
sub-miniature relay switch, 5 A, 300 mW, 60 mA, 83.3 Ω, Low power
