ATF-511P8-BLK, US $ 2.03-2.62 , Avago Technologies, ATF-511P8-BLK DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219145 Detail

ATF-511P8-BLK: Transistors RF GaAs Transistor GaAs High Linearity

ATF-511P8-BLK Data Sheet

US $ 2.03~2.62 / Piece | Get Latest Price

Part Number:: ATF-511P8-BLK
Mfg:: Avago Technologies
Supply Ability:: 5000

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Upload time: 2025/12/4

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Product Details

Quick Details

Technology Type :	EpHEMT	Frequency :	2 GHz
Gain :	14.8 dB	Noise Figure :	1.4 dB
Forward Transconductance gFS (Max / Min) :	2178 mmho	Drain Source Voltage VDS :	7 V
Gate-Source Breakdown Voltage :	- 5 V to 1 V	Continuous Drain Current :	1 A
Maximum Operating Temperature :	+ 150 C	Power Dissipation :	3 W
Mounting Style :	SMD/SMT	Package / Case :	LPCC-8

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Gain : 14.8 dB
Frequency : 2 GHz
Technology Type : EpHEMT
Gate-Source Breakdown Voltage : - 5 V to 1 V
Continuous Drain Current : 1 A
Drain Source Voltage VDS : 7 V
Package / Case : LPCC-8
Noise Figure : 1.4 dB
Forward Transconductance gFS (Max / Min) : 2178 mmho
Power Dissipation : 3 W

Parameters:

Technical/Catalog Information	ATF-511P8-BLK
Vendor	Avago Technologies US Inc.
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	8-LPCC
FET Type	N-Channel
Typical RF Application	MMDS
Typical RF Application	WLL
Drain to Source Voltage (Vdss)	7.0 V [Nom]
Voltage Gate to Source (Vgs)	5.0 V [Max]
Drain Gate Voltage (Vdg)	5.0 [Nom]
Continuous Drain Current (Id)	1.00 A [Nom]
Forward Gate Current (Igf)	46.0 [Nom]
Power Dissipation	3.000 W [Max]
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ATF 511P8 BLK ATF511P8BLK

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ATF-511P8-BLK

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