ATF-511P8-BLK

Transistors RF GaAs Transistor GaAs High Linearity

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SeekIC No. : 00219145 Detail

ATF-511P8-BLK: Transistors RF GaAs Transistor GaAs High Linearity

floor Price/Ceiling Price

US $ 2.03~2.62 / Piece | Get Latest Price
Part Number:
ATF-511P8-BLK
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~150
  • 150~250
  • 250~500
  • 500~1000
  • Unit Price
  • $2.62
  • $2.35
  • $2.16
  • $2.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Technology Type : EpHEMT Frequency : 2 GHz
Gain : 14.8 dB Noise Figure : 1.4 dB
Forward Transconductance gFS (Max / Min) : 2178 mmho Drain Source Voltage VDS : 7 V
Gate-Source Breakdown Voltage : - 5 V to 1 V Continuous Drain Current : 1 A
Maximum Operating Temperature : + 150 C Power Dissipation : 3 W
Mounting Style : SMD/SMT Package / Case : LPCC-8    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Gain : 14.8 dB
Frequency : 2 GHz
Technology Type : EpHEMT
Gate-Source Breakdown Voltage : - 5 V to 1 V
Continuous Drain Current : 1 A
Drain Source Voltage VDS : 7 V
Package / Case : LPCC-8
Noise Figure : 1.4 dB
Forward Transconductance gFS (Max / Min) : 2178 mmho
Power Dissipation : 3 W


Parameters:

Technical/Catalog InformationATF-511P8-BLK
VendorAvago Technologies US Inc.
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name8-LPCC
FET TypeN-Channel
Typical RF ApplicationMMDS
Typical RF ApplicationWLL
Drain to Source Voltage (Vdss)7.0 V [Nom]
Voltage Gate to Source (Vgs)5.0 V [Max]
Drain Gate Voltage (Vdg)5.0 [Nom]
Continuous Drain Current (Id)1.00 A [Nom]
Forward Gate Current (Igf)46.0 [Nom]
Power Dissipation3.000 W [Max]
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ATF 511P8 BLK
ATF511P8BLK



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