ATF-511P8-TR1

Transistors RF GaAs Transistor GaAs High Linearity

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SeekIC No. : 00219120 Detail

ATF-511P8-TR1: Transistors RF GaAs Transistor GaAs High Linearity

floor Price/Ceiling Price

US $ 1.9~2.03 / Piece | Get Latest Price
Part Number:
ATF-511P8-TR1
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1935
  • 1935~3000
  • Unit Price
  • $2.03
  • $1.9
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Technology Type : EpHEMT Frequency : 2 GHz
Gain : 14.8 dB Noise Figure : 1.4 dB
Forward Transconductance gFS (Max / Min) : 2178 mmho Drain Source Voltage VDS : 7 V
Gate-Source Breakdown Voltage : - 5 V to 1 V Continuous Drain Current : 1 A
Maximum Operating Temperature : + 150 C Power Dissipation : 3 W
Mounting Style : SMD/SMT Package / Case : LPCC-8    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Gain : 14.8 dB
Frequency : 2 GHz
Technology Type : EpHEMT
Gate-Source Breakdown Voltage : - 5 V to 1 V
Continuous Drain Current : 1 A
Drain Source Voltage VDS : 7 V
Package / Case : LPCC-8
Noise Figure : 1.4 dB
Forward Transconductance gFS (Max / Min) : 2178 mmho
Power Dissipation : 3 W


Pinout

  Connection Diagram


Description

The features of ATF-511P8-TR1 are: (1)Single voltage operation; (2)High linearity and P1dB; (3)Low noise figure; (4)Excellent uniformity in product specifications; (5)Small package size: 2.0 x 2.0 x 0.75 mm; (6)Point MTTF > 300 years[2]; (7)MSL-1 and lead-free; (8)Tape-and-reel packaging option available.

The following is about the absolute maximum ratings of ATF-511P8-TR1: (1)DrainSource Voltage: 7V; (2)GateSource Voltage: -5 to 1 V; (3)Gate Drain Voltage: -5 to 1 V; (4)Drain Current: 1A; (5)Gate Current: 46mA; (6)Total Power Dissipation: 3W; (7)RF Input Power: +30dBm; (8)Channel Temperature: 150°C; (9)Storage Temperature: -65 to 150°C; (10)Thermal Resistance: 33°C/W.

The electrical characteristics of the ATF-511P8-TR1: (1)Operational Gate Voltage: 0.25V to 0.8V at Vds = 4.5V, Ids = 200 mA; (2)Threshold Voltage: 0.28V at Vds = 4.5V, Ids = 32 mA; (3)Saturated Drain Current: 16.4 A at Vds = 4.5V, Vgs = 0V; (4)Transconductance: 2178 mmho at Vds = 4.5V, Gm = Idss/Vgs; Vgs = Vgs1 Vgs2, Vgs1 = 0.55V, Vgs2 = 0.5V; (5)Gate Leakage Current: -27 A to -2A at Vds = 0V, Vgs = -4.5V.




Parameters:

Technical/Catalog InformationATF-511P8-TR1
VendorAvago Technologies US Inc.
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name8-LPCC
FET TypeN-Channel
Typical RF ApplicationMMDS
Typical RF ApplicationWLL
Drain to Source Voltage (Vdss)7.0 V [Nom]
Voltage Gate to Source (Vgs)5.0 V [Max]
Drain Gate Voltage (Vdg)5.0 [Nom]
Continuous Drain Current (Id)1.00 A [Nom]
Forward Gate Current (Igf)46.0 [Nom]
Power Dissipation3.000 W [Max]
PackagingTape & Reel, 7"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ATF 511P8 TR1
ATF511P8TR1



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