ATF-521P8-TR2, US $ 1.6-1.66 , Avago Technologies, ATF-521P8-TR2 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219117 Detail

ATF-521P8-TR2: Transistors RF GaAs Transistor GaAs High Linearity

ATF-521P8-TR2 Data Sheet

US $ 1.6~1.66 / Piece | Get Latest Price

Part Number:: ATF-521P8-TR2
Mfg:: Avago Technologies
Supply Ability:: 5000

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$1.66
$1.6

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15 Days

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Product Details

Quick Details

Technology Type :	EpHEMT	Frequency :	2 GHz
Gain :	17 dB	Noise Figure :	1.5 dB
Forward Transconductance gFS (Max / Min) :	1300 mmho	Drain Source Voltage VDS :	7 V
Gate-Source Breakdown Voltage :	- 5 V to 1 V	Continuous Drain Current :	500 mA
Maximum Operating Temperature :	+ 150 C	Power Dissipation :	1.5 W
Mounting Style :	SMD/SMT	Package / Case :	LPCC-8

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Frequency : 2 GHz
Technology Type : EpHEMT
Gate-Source Breakdown Voltage : - 5 V to 1 V
Gain : 17 dB
Drain Source Voltage VDS : 7 V
Noise Figure : 1.5 dB
Forward Transconductance gFS (Max / Min) : 1300 mmho
Continuous Drain Current : 500 mA
Power Dissipation : 1.5 W
Package / Case : LPCC-8

Parameters:

Technical/Catalog Information	ATF-521P8-TR2
Vendor	Avago Technologies US Inc.
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	8-LPCC
FET Type	N-Channel
Typical RF Application	MMDS
Typical RF Application	WLL
Drain to Source Voltage (Vdss)	7.0 V [Nom]
Voltage Gate to Source (Vgs)	5.0 V [Max]
Drain Gate Voltage (Vdg)	5.0 [Nom]
Continuous Drain Current (Id)	500.00 mA [Nom]
Forward Gate Current (Igf)	46.0 [Nom]
Power Dissipation	1.500 W [Max]
Packaging	Tape & Reel, 13"
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ATF 521P8 TR2 ATF521P8TR2

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ATF-521P8-TR2

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