ATF-521P8

Features:

* Single voltage operation
* High linearity and P1dB
* Low noise figure
* Excellent uniformity in product specifications
* Small package size:3 2.0 x 2.0 x 0.75 mm
* Point MTTF > 300 years
* MSL-1 and lead-free
* Tape-and-reel packaging option available




Application

* Front-end LNA Q2 and Q3, driver or pre-driver amplifier for Cellular/PCS and WCDMA wireless infrastructure
* Driver amplifier for WLAN, WLL/RLL and MMDS applications
* General purpose discrete E-pHEMT for other high linearity applications




Pinout






Specifications

Symbol	Parameter	Units	Absolute Maximum
VDS	Drain Source Voltage[2]	V	7
VGS	GateSource Voltage[2]	V	-5 to 1
VGD	Gate Drain Voltage[2]	V	-5 to 1
IDS	Drain Current[2]	mA	500
IGS	Gate Current	mA	46
Pdiss	Total Power Dissipation[3]	W	1.5
Pin max.	RF Input Power	dBm	27
TCH	Channel Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150
ch_b	Thermal Resistance	°C/W	45

Description

The ATF-521P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.

Agilent Technologies's ATF-521P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC ^[3]) package. The device is ideal as a medium-power, high-linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz.

The thermally efficient package measures only 2mm x 2mm x 0.75mm. ATF-521P8's backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested.