Transistors RF GaAs Transistor GaAs High Linearity
ATF-531P8-TR2: Transistors RF GaAs Transistor GaAs High Linearity
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| Technology Type : | EpHEMT | Frequency : | 2 GHz | ||
| Gain : | 20 dB | Noise Figure : | 0.6 dB | ||
| Forward Transconductance gFS (Max / Min) : | 650 mmho | Drain Source Voltage VDS : | 7 V | ||
| Gate-Source Breakdown Voltage : | - 5 V to 1 V | Continuous Drain Current : | 300 mA | ||
| Maximum Operating Temperature : | + 150 C | Power Dissipation : | 1 W | ||
| Mounting Style : | SMD/SMT | Package / Case : | LPCC-8 |
| Technical/Catalog Information | ATF-531P8-TR2 |
| Vendor | Avago Technologies US Inc. |
| Category | Discrete Semiconductor Products |
| Transistor Type | pHEMT FET |
| Voltage - Rated | 38V |
| Current Rating | 135mA |
| Package / Case | 8-LPCC |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ATF 531P8 TR2 ATF531P8TR2 |