ATF-531P8

Features:

• Single voltage operation
• High linearity and gain
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years^[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option available




Application

• Front-end LNA Q1 and Q2 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure
• Driver amplifier for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications




Pinout






Specifications

Symbol	Parameter	Units	Absolute Maximum
VDS	DrainSource Voltage[2]	V	7
VGS	GateSource Voltage[2]	V	-5 to 1
VGO	Gate Drain Voltage[2]	V	-5 to 1
IDS	Drain Current[2]	mA	300
IGS	Gate Current	mA	20
Pdiss	Total Power Dissipation[3]	W	1
Pin max	RF Input Power	dBm	+24
TCH	Channel Temperature		150
TSTG	Storage Temperature		-65 to 150
ch_b	Thermal Resistance[4]	/W	63

Notes:
1. Operation of this device in excess of any one of these parameters may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT_B is 25°C. Derate 16 mW/°C for T_B > 87°C.
4. Thermal resistance measured using150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input Power provided IGS is limited to 20mA. IGS at P_1dB drive level is bias circuit dependent.

Description

Agilent Technologies's ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC^[3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz.

The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device ATF-531P8 has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested

The ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.