Maximum Operating Temperature
: + 150 C
Mounting Style
: SMD/SMT
Drain Source Voltage VDS
: 5 V
Continuous Drain Current
: 100 mA
Frequency
: 2 GHz
Package / Case
: SOT-343
Technology Type
: EpHEMT
Gate-Source Breakdown Voltage
: - 5 V to 1 V
Forward Transconductance gFS (Max / Min)
: 220 mmho
Power Dissipation
: 270 mW
Gain
: 17.7 dB
Noise Figure
: 0.6 dB
DescriptionAgilent Technologies's ATF-55143-TR1G is a type of high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70(SOT-343) surface mount plastic package.The combination of high gain,high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.
Features of the ATF-55143-TR1G are:(1) high linearity performance;(2) single supply enhancement mode technology;(3) very low noise figure;(4) excellent uniformity in product specifications;(5) 400 micron gate width;(6) low cost surface mount small plastic package SOT-343 (4 lead SC-70);(7) tape-and-reel packaging option available.
The absolute maximum ratings of the ATF-55143-TR1G can be summarized as:(1): drain-source voltage(VDS) is 5 V;(2): gate-source voltage(VGS) is -5 V to 1 V;(3): gate drain voltage(VGD) is 5 V;(4): drain current(IDS) is 100 mA; (5): gate current (IGS) is 1 mA;(6): total power dissipation(Pdiss) is 270 mW;(7): max. RF input Power(Pin) is 7 dBm;(8): channel temperature(TCH) is 150°C;(9): storage temperature(TSTG) is -65°C to 150°C.
Parameters: | Technical/Catalog Information | ATF-55143-TR1G |
| Vendor | Avago Technologies US, Inc. (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | pHEMT FET |
| Voltage - Rated | 5V |
| Current Rating | 100mA |
| Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ATF 55143 TR1G
ATF55143TR1G
516 1573 6 ND
51615736ND
516-1573-6
|
ATF-55143-TR1G Data Sheet
