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AWT6109

Features: • InGaP HBT Technology• High Efficiency (35% Typ)• Low Leakage Current (5A)• SMT Module Package• Small Foot Print (6mm x 6mm)• Low Profile (1.5mm)• 50 Input and Output Matching• POUT = 28.5 dBm @ Icq= 60mA Typ• No Mode Switching Requ...

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SeekIC No. : 004292251 Detail

AWT6109: Features: • InGaP HBT Technology• High Efficiency (35% Typ)• Low Leakage Current (5A)• SMT Module Package• Small Foot Print (6mm x 6mm)• Low Profile (1.5mm)•...

AWT6109 Data Sheet

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Part Number:
AWT6109
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• InGaP HBT Technology
• High Efficiency (35% Typ)
• Low Leakage Current (5A)
• SMT Module Package
• Small Foot Print (6mm x 6mm)
• Low Profile (1.5mm)
• 50 Input and Output Matching
• POUT = 28.5 dBm @ Icq= 60mA Typ
• No Mode Switching Required
• CDMA 2000 1XRTT Compliant


Application

• Korean Band PCS CDMA Handsets


Specifications

PARAMETER MIN MAX UNIT
Supply Voltage (VCC ) 0 +5 V
VMOD Voltage (VMOD) 0 +3.5 V
Reference Voltage (VREF) 0 +3.5 V
RF Input Power (PIN) - +10 dBm
Storage Temperature (TSTG) -40 +150 °C



Description

The AWT6109 is a 3.5 V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Full output power is achieved at a low AWT6109 KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module Data Sheet - Rev 2.2 quiescent current of 60mA, reducing power drain on the system battery. No switching is required between high and low output power levels. The 6mm x 6mm laminate package is self contained, incorporating 50 input and output matching networks optimized for output power, linearity, and efficiency.




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