AWT6113

Features: • InGaP HBT Technology• High Efficiency: 38%• Low Quiescent Current: 44 mA• Low Leakage Current in Shutdown Mode: <1 A• Optimized for a 50 System• Low Profile Surface Mount Package: 1.56mm max• CDMA 1XRTT Compliant• CDMA 1xEV-DO Complia...

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AWT6113 Picture
SeekIC No. : 004292254 Detail

AWT6113: Features: • InGaP HBT Technology• High Efficiency: 38%• Low Quiescent Current: 44 mA• Low Leakage Current in Shutdown Mode: <1 A• Optimized for a 50 System• L...

floor Price/Ceiling Price

Part Number:
AWT6113
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

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Product Details

Description



Features:

• InGaP HBT Technology
• High Efficiency: 38%
• Low Quiescent Current: 44 mA
• Low Leakage Current in Shutdown Mode: <1 A
• Optimized for a 50 System
• Low Profile Surface Mount Package: 1.56mm max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant



Application

• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets



Pinout

  Connection Diagram
  Connection Diagram


Specifications

PARAMETER MIN MAX UNIT
Supply Voltage (VCC ) 0 +5 V
Mode Control Voltage (VMODE) 0 +3.5 V
Reference Voltage (VREF) 0 +3.5 V
RF Input Power (PIN) - +10 dBm
Storage Temperature (TSTG) -40 +150  



Description

The AWT6113 is a high power, high efficiency amplifier module for PCS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 system.


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