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Description: The Am29BDS643G is a 64 Mbit, 1.8 Volt-only, simul-taneous Read/Write, Burst Mode Flash memorydevice, ...


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Am29BDS643G General Description


The Am29BDS643G is a 64 Mbit, 1.8 Volt-only, simul-taneous Read/Write, Burst Mode Flash memorydevice, organized as 4,194,304 words of 16 bits each.

This device uses a single VCC of 1.7 to 1.9 V to read,program, and erase the memory array. A 12.0-volt VPPmay be used for faster program performance if desired.

The device can also be programmed in standardEPROM programmers.

At 66 MHz, the Am29N643 provides a burst access of11 ns at 30 pF with initial access times of 71 ns at 30pF. At 54 MHz, the device provides a burst access of13.5 ns at 30 pF with initial access times of 87.5 ns at30 pF. At 40 MHz, the device provides a burst accessof 20 ns at 30 pF with initial access times of 95 ns at 30pF. The device operates within the industrial tempera-ture range of 40°C to +85°C. The device is offered inthe 44-ball Very Thin FBGA package.

Am29BDS643G Maximum Ratings

Storage Temperature . . . . . . . . ..65°C to +150°C
Ambient Temperature
with Power Applied  . . . . . . . . . .  65°C to +125°C
Voltage with Respect to Ground,
All Inputs and I/Os
except VPP (Note 1) . . . . . . . . 0.5 V to VCC + 0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . . .0.5 V to +2.5 V
VPP (Note 2) . . . . . . . . . . . . . . . . ..0.5 V to +12.5 V
Output Short Circuit Current (Note 3)  . . . . .  100 mA

Am29BDS643G datasheet

Am29BDS643G
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