Am29DL640G70

The Am29DL640G is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15DQ0; byte mode data appears on DQ7DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

The device is available with an access time of 65, 70, 90, or 120 ns and is offered in 48-pin TSOP, 63-ball Fine-Pitch BGA, and 64-ball Fortified BGA packages. Standard control pins-chip enable (CE#), write enable (WE#), and output enable (OE#)-control normal read and write operations, and avoid bus contention issues.

The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

Simultaneous Read/Write Operations with Zero Latenc The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks, two 8 Mb banks with small and large sectors, and two 24 Mb banks of large sectors. Sector addresses are fixed, system software can be used to form user-defined bank groups.

During an Erase/Program operation, any of the three non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations.

The Am29DL640G can be organized as both a top and bottom boot sector configuration.