Am29F016B

The Am29F016B is a 16 Mbit, 5.0 volt-only Flash memory organized as 2,097,152 bytes of 8 bits each.The 2 Mbytes of data are divided into 32 sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0DQ7. The Am29F016B is manu- factured using AMD's 0.35 µm process technology.This device is designed to be programmed in-systemwith the standard system 5.0 volt V_CC supply. A 12.0volt V_PP is not required for program or eraseo perations. The device can also be programmed in standard EPROM programmers.The standard device offers an access time of 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls.The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com- mands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry.Writecycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 volt Flash or EPROM devices.The device is programmed by executing the program command sequence. This invokes the Embedded Program algorithm-an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. The device is erased by executing the erase command sequence. This invokes the Embedded Erase algorithm-an internal algorithm thatautomatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.