Purchase Am29F200A, In-stock Am29F200A From SeekIC.
Part Number: Am29F200A
Description: The Am29F200A is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data a...
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Am29F200A
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General Description
Am29F200A General Description
The Am29F200A is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0DQ7; the 16 bits on DQ0DQ15. The Am29F200A is offered in 44-pin SO and 48-pin TSOP pack-ages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard device offers access times of 55, 70,90, 120, and 150 ns, allowing operation of high-speed micro-processors without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that automatically times the program pulse widths and verifies proper cell margin.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm-an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the RY/BY#pin, or by reading the DQ7 (Data# Polling) and DQ6/DQ2 (toggle) status bits. After a program or erase cycle has beencom-pleted, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hard-ware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from,or program data to, any sector that is not selected for erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.
The system can place the device into the standby mode.Power consumption is greatly reduced in this mode.AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest lev-
els of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
Am29F200A Maximum Ratings
Storage Temperature Plastic Packages . . . . . . . . . . . . . . . 65°C to +150°C
Ambient Temperature with Power Applied. . . . . . . . . . . . . . 55°C to +125°C
Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . .2.0 V to +7.0 V
A9, OE#, and RESET# (Note 2). . . . . . . . . . . .2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .0.5 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Ambient Temperature with Power Applied. . . . . . . . . . . . . . 55°C to +125°C
Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . .2.0 V to +7.0 V
A9, OE#, and RESET# (Note 2). . . . . . . . . . . .2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .0.5 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
AM29F200A-1
PDF/DataSheet Download
- Datasheet: AM29F200A-1
- File Size: 121540 KB
- Manufacturer: AMD [Advanced Micro Devices]
- Click here to Download
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