Am29LV640MH

Pinout




Specifications

Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . . . . . . . . . . . 65°C to +125°C
Voltage with Respect to Ground
    V_CC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to +4.0 V
    V_IO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to +4.0 V
    A9, OE#, ACC, and RESET# (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to +12.5 V
    All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to V_CC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA

Notes:
1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input or I/O pins may overshoot V_SS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is V_CC +0.5 V. See Figure 10. During voltage transitions, input or I/O pins may overshoot to V_CC +2.0 V for periods up to 20 ns. See Figure 11.
2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is 0.5 V. During voltage transitions, A9, OE#, ACC, and RESET# may overshoot V_SS to 2.0 V for periods of up to 20 ns. See Figure 10. Maximum DC input voltage on pin A9, OE#, ACC, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.


Description

The Am29LV640MH/L is a 64 Mbit, 3.0 volt single power supply flash memory device organized as 4,194,304 words or 8,388,608 bytes. The device has an 8-bit/16-bit bus and can be programmed either in the host system or in standard EPROM programmers.
 
An access time of 90, 100, 110, or 120 ns is available. Note that each access time has a specific operating voltage range (V_CC) and an I/O voltage range (V_IO), as specified in the Product Selector Guide and the Ordering Information sections. The device is offered in a 56-pin TSOP or 64-ball Fortified BGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a V_CC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired.

Am29LV640MH is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. Am29LV640MH is fully erased when shipped from the factory.

Device programming and erasure are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.

The VersatileI/O™ (V_IO) control allows the host system to set the voltage levels that the device generates and tolerates on the CE# control input and DQ I/Os to the same voltage level that is asserted on the V_IO pin. Refer to the Ordering Information section for valid V_IO options.

Hardware data protection measures include a low V_CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/ Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation.

The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. Am29LV640MH reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time.

The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin. The protected sector will still be protected even during accelerated programming.

The SecSi™ (Secured Silicon) Sector provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur.

Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. Am29LV640MHelectrically erases all bits within a sector simultaneously via hot-hole assisted erase.The data is programmed using hot electron injection.