Am54BDS128AG

The Am54BDS128AG is a 64 Mbit, 1.8 Volt-only, simulta-neous Read/Write, Burst Mode Flash memory device, orga-nized as 4,194,304 words of 16 bits each. This device usesa single VCC of 1.65 to 1.95 V to read, program, and erasethe memory array. A 12.0-volt VID may be used for faster pro-gram performance if desired. The device can also be pro-grammed in standard EPROM programmers. At 54 MHz, the device provides a burst access of 13.5 ns at30 pF with a latency of 87.5 ns at 30 pF. At 40 MHz, the de-vice provides a burst access of 20 ns at 30 pF with a latencyof 95 ns at 30 pF. The device operates within the industrialtemperature range of -40°C to +85°C. The device is offeredin a 93-ball FBGA package.

The Simultaneous Read/Write architecture provides simul-taneous operation by dividing the memory space into fourbanks. Am54BDS128AG can improve overall system performanceby allowing a host system to program or erase in one bank,then immediately and simultaneously read from anotherbank, with zero latency. This releases the system from wait-ing for the completion of program or erase operations.