B116AW02 V.0

The B116AW02 is designed as one kind of silicon PNP power transistor that can be used in high power amplifier applications. And the features of this device are:(1)With TO-3PFa package; (2)Complement to type 2SD1715; (3)High fT; (4)Satisfactory linearity of hFE; (5)Wide area of safe operation.

The absolute maximum ratings of the B116AW02 can be summarized as:(1)Collector-base voltage: -150 V;(2)collector-emitter voltage: -150 V;(3)Emitter-base voltage: -5 V;(4)Collector current: -9 A;(5)Collector current-peak: -15 A;(6)Collector power dissipation (TC=25): 100 W;(7)Collector power dissipation: 3 W;(8)Junction temperature: 150 ;(9)Storage temperature: -55 to 150 .

The electrical characteristics of  B116AW02 can be summarized as:(1)Collector-emitter saturation voltage: -2.0 V;(2)Base-emitter on voltage: -1.8 V;(3)Collector cut-off current: -50 A;(4)Emitter cut-off current: -50 A;(5)DC current gain: 20;(6)Output capacitance: 330 pF;(7)transition frequency: 20 MHz. If you want to know more information such as the electrical characteristics about the B116AW02, please download the datasheet in www.seekic.com or www.chinaicmart.com.