B55N02

Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 20 V Gate-S ource Voltage VGS ±12 V Drain Current-Continuous @ TJ=125 -...

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SeekIC No. : 004294827 Detail

B55N02: Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S o...

floor Price/Ceiling Price

Part Number:
B55N02
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.



Specifications

Parameter Symbol Limit Unit
Drain-S ource Voltage VDS 20 V
Gate-S ource Voltage VGS ±12 V
Drain Current-Continuous @ TJ=125 -Pulseda ID 23 A
IDM 57 A
Drain-S ource Diode Forward Current IS 55 A
Maximum Power Dissipation @ Tc=25 PD 75 W
Operating and S torage Temperature R ange TJ , TS TG -65 to 175
THE RMAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case R JC 2 /W
Thermal R esistance, Junction-to-Ambient R JA 62.5 /W



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