Purchase B9D0N50P1, In-stock B9D0N50P1 From SeekIC.
Part Number: B9D0N50P1
Description: This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, ...
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B9D0N50P1
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DataSheet
General Description
B9D0N50P1 General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
B9D0N50P1 Maximum Ratings
| CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | ||
|
KHB9D5N20P1 |
KHB9D5N20F1 KHB9D5N20F2 | ||||
| Drain-Source Voltage Gate-Source Voltage |
VDSS VGSS |
250 ±30 |
V V | ||
| Drain Current | @Tc=25 @Tc=100 Pulsed(Note1) |
ID IDP |
9 5.4 36 |
9* 5.4* 36* |
A |
| Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) |
EAS EAR dv/dt |
360 13.5 4.5 |
mJ mJ V/ns | ||
| Drain Power Dissipation |
Ta=25 Derate above25 |
PD |
135 1.07 |
44 0.35 |
W W/ |
| Maximum Junction Temperature Storage Temperature Range |
Tj Tstg |
150 -55 150 |
| ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to- Ambient |
RthJC RthCS RthJA |
0.93 0.5 62.5 |
2.86 - 62.5 |
/W /W /W | |
* : Drain current limited by maximum junction temperature.
B9D0N50P1 Features
VDSS(Min.)= 500V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=0.8 @VGS =10V
Qg(typ.) =34.6nC
Drain-Source ON Resistance :
RDS(ON)=0.8 @VGS =10V
Qg(typ.) =34.6nC
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