BA1L3N

Features: • On-chip bias resistor (R1 = 4.7 k, R2 = 10 k)• Complementary transistor with BN1L3NSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current ...

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SeekIC No. : 004295427 Detail

BA1L3N: Features: • On-chip bias resistor (R1 = 4.7 k, R2 = 10 k)• Complementary transistor with BN1L3NSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V...

floor Price/Ceiling Price

Part Number:
BA1L3N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Description



Features:

• On-chip bias resistor
  (R1 = 4.7 k, R2 = 10 k)
• Complementary transistor with BN1L3N



Specifications

Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC(DC) 100 mA
Collector current (Pulse) Lc(Pulse) 200 mA
Total power dissipation PT 250 mW
Junction temperature tj 150 °C
Storage temperature TSTG −55 to +150 °C
* PW 10 ms, duty cycle 50 %


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