Features: • On-chip bias resistor (R1 = 4.7 k, R2 = 10 k)• Complementary transistor with BN1L3NSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current ...
BA1L3N: Features: • On-chip bias resistor (R1 = 4.7 k, R2 = 10 k)• Complementary transistor with BN1L3NSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V...
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| Parameter | Symbol | Ratings | Unit |
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current (DC) | IC(DC) | 100 | mA |
| Collector current (Pulse) | Lc(Pulse) | 200 | mA |
| Total power dissipation | PT | 250 | mW |
| Junction temperature | tj | 150 | °C |
| Storage temperature | TSTG | −55 to +150 | °C |