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Part Number: BAR63V-02V

 

 

 

 

Description: Characterized by a very low reverse Capacitance thePIN Diode BAR63V-02V was designed for RF signaltuni...


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BAR63V-02V General Description


Characterized by a very low reverse Capacitance thePIN Diode BAR63V-02V was designed for RF signaltuning. As a function of the forward bias current theforward resistance (rf) can be adjusted to less than1 while the low reverse capacitance offers a highisolation. Typical applications for this PIN Diode arewireless, mobile and TV-systems.

BAR63V-02V Maximum Ratings

Parameter Test condition
Symbol
Value
Unit
Reverse voltage  
VR
50
V
Forward current  
IF
100
mA
Junction temperature  
Tj
150
Storage temperature range  
Tstg
-55 ... 150

BAR63V-02V Features

• Low forward resistance
• Space saving SOD-523 package with low series inductance
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
   RoHS 2002/95/EC and WEEE 2002/96/EC

BAR63V-02V Typical Application

· For frequency up to 3 GHz
· RF-signal tuning
· Mobile, wireless and TV-Applications

BAR63V-02V Connection Diagram

BAR63V-02V  Connection Diagram

BAR63V-02V datasheet

BAR63V-02V
PDF/DataSheet Download

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