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Part Number: BAR63V-04W

 

 

 

 

Description: Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tu...


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BAR63V-04W General Description


Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems.

BAR63V-04W Maximum Ratings

Parameter Test condition Symbol Value Unit
Reverse voltage   VR 50 V
Forward current   IF 150 mA
Junction temperature   Tj 150 °C
Storage temperature range   Tstg -55 to +150 °C

BAR63V-04W Features

• Low forward resistance
• Very small reverse capacitance

BAR63V-04W Typical Application

For frequency up to 3 GHz
RF-signal tuning
Mobile , wireless and TV-Applications

BAR63V-04W datasheet

BAR63V-04W-GS08
PDF/DataSheet Download

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