Features: · Low forward voltage· Guard ring protected· Very small SMD package· Low diode capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.PinoutSpecifications Part Number BAS40W Power Rating (mW) 200 Peak Repetitive Reverse ...
BAS40W: Features: · Low forward voltage· Guard ring protected· Very small SMD package· Low diode capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.P...
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| Part Number | BAS40W |
| Power Rating (mW) | 200 |
| Peak Repetitive Reverse Voltage VRRM (V) | 40 |
| Forward Continuous Current IFM (mA) | 200 |
| Forward Voltage Drop VF (V) | 0.38 |
| @ IF (mA) | 1 |
| Max Reverse Current IR (µA) | 0.2 |
| @ VR (V) | 30 |
| Capacitance CTOT (typ) (pF) | 5 |
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VR | continuous reverse voltage | - | 40 | V | |
| IF | continuous forward current | - | 120 | mA | |
| IFRM | repetitive peak forward current | tp 1 s;0.5 | - | 120 | mA |
| IFSM | non-repetitive peak forward current | tp < 10 ms | - | 200 | mA |
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | - | 150 | °C | |
| Tamb | operating ambient temperature | -65 | +150 | °C |
Planar Schottky barrier diodes encapsulated in a BAS40W very small plastic SMD package. Single diodes and double diodes with different pinning are available.