BAS416

Features: ` Plastic SMD package` Low leakage current: typ. 3 pA` Switching time: typ. 0.8 s` Continuous reverse voltage: max. 75 V` Repetitive peak reverse voltage: max. 85 V` Repetitive peak forward current: max. 500 mA.Application· Low-leakage current applications in surface mounted circuits.Pin...

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BAS416 Picture
SeekIC No. : 004296271 Detail

BAS416: Features: ` Plastic SMD package` Low leakage current: typ. 3 pA` Switching time: typ. 0.8 s` Continuous reverse voltage: max. 75 V` Repetitive peak reverse voltage: max. 85 V` Repetitive peak forwar...

floor Price/Ceiling Price

Part Number:
BAS416
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Description



Features:

` Plastic SMD package
` Low leakage current: typ. 3 pA
` Switching time: typ. 0.8 s
` Continuous reverse voltage: max. 75 V
` Repetitive peak reverse voltage: max. 85 V
` Repetitive peak forward current: max. 500 mA.



Application

· Low-leakage current applications in surface mounted circuits.


Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS MIN. MAX. UNIT
VRRM Repetitive peak reverse voltage   - 85
V
VR continuous reverse voltage   - 75
V
IF Continuous forward current see Fig.2 - 200
mA
IFRM repetitive peak forward current   - 500
mA
IFSM non-repetitive peak forward current square wave; Tj = 25 prior to surge; see Fig.4
t = 1 s
t = 1 ms
t = 1 s


-
-
-



4
1
0.5


A
A
A
Ptot total power dissipation Tamb = 25; note 1 - 250
mW
Tstg storage temperature   -65 +150
TJ junction temperature   - 150
Note
1. Device mounted on an FR4 printed-circuit board.



Description

Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small BAS416 SMD plastic package.




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