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BAS70W

Features: · Low forward voltage· High breakdown voltage· Guard ring protected· Very small SMD package· Low capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.PinoutSpecifications Part Number BAS70W Power Rating (mW) 200 Peak R...

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SeekIC No. : 004296327 Detail

BAS70W: Features: · Low forward voltage· High breakdown voltage· Guard ring protected· Very small SMD package· Low capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits·...

BAS70W Data Sheet

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Part Number:
BAS70W
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low forward voltage
· High breakdown voltage
· Guard ring protected
· Very small SMD package
· Low capacitance.




Application

· Ultra high-speed switching
· Voltage clamping
· Protection circuits
· Blocking diodes.




Pinout

Connection Diagram




Specifications

Part Number BAS70W
Power Rating (mW) 200
Peak Repetitive Reverse Voltage VRRM (V) 70
Forward Continuous Current IFM (mA) 70
Forward Voltage Drop VF (V) 0.41
@ IF (mA) 1
Max Reverse Current IR (µA) 0.1
@ VR (V) 50
Capacitance CTOT (typ) (pF) 2


SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR continuous reverse voltage - 70 V
IF continuous forward current - 70 mA
IFRM repetitive peak forward current tp <1 s; <0.5 - 70 mA
IFSM non-repetitive peak forward current tp < 10 ms - 100 mA
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C





Description

Planar Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W;-05W; -06W) are available.

The diodes are encapsulated in a SOT323 very small plastic SMD package.






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