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MFG:N/A  Package Cooled:N/A  D/C:09+  

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Part Number: BAV756S

 

MFG: N/A

Package Cooled: N/A

D/C: 09+

Description: The BAV756S consists of four high-speed switching diodesfabricated in planar technology, and enc...


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BAV756S General Description


The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode.

BAV756S Maximum Ratings

Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse voltage   - 85 V
VR continuous reverse voltage   - 75 V
IF continuous forward current single diode loaded; see Fig.2;
note 1		 - 250 mA
double diode loaded; see Fig.2;
note 1		 - 100 mA
IFRM repetitive peak forward current - 450 mA
IFSM non-repetitive peak forward curren square wave; Tj = 25 prior to
surge; see Fig.4
t = 1 s
t = 1 ms
t = 1 s

-
-
-

4
1
0.5

A
A
A
Ptot total power dissipation TS = 25 °C; note 1 - 350 mW
Tstg storage temperature
-65 +150
Tj junction temperature -65 150
Note
1. One or more diodes loaded.

BAV756S Features

· Small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 85 V
· Repetitive peak forward current: max. 450 mA.

BAV756S Typical Application

· General purpose switching in e.g. surface mounted circuits.

BAV756S Connection Diagram

BAV756S Connection Diagram

BAV756S datasheet

BAV756S
PDF/DataSheet Download

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