Purchase BB102M, In-stock BB102M From SeekIC.
- Table of contents:
BB102M
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Suppliers
DataSheet
General Description
BB102M Maximum Ratings
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDS |
12 |
V |
| Gate 1 to source voltage |
VG1S |
+10 0 |
V |
| Gate 2 to source voltage |
VG2S |
±10 |
V |
| Drain current |
ID |
25 |
mA |
| Channel power dissipation |
Pch |
150 |
mW |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |
BB102M Features
· Build in Biasing Circuit; To reduce using parts cost & PC board space.
· Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
· Provide mini mold packages; MPAK-4(SOT-143mod)
· Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
· Provide mini mold packages; MPAK-4(SOT-143mod)
BB102M
PDF/DataSheet Download
- Datasheet: BB102M
- File Size: 66092 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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