BC214

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 140


Specifications

Rating	Symbol	BC 212	BC 213	BC 214	Unit
CollectorEmitter Voltage	VCEO	-50	-30	-30	Vdc
CollectorBase Voltage	VCBO	-60	-45	-45	Vdc
EmitterBase Voltage	VEBO	-5.0			Vdc
Collector Current - Continuous	IC	-100			mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	350 2.8			mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.0 8.0			Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150			°C

Parameters:

Technical/Catalog Information	BC214
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 500A, 10mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC214 BC214