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BC32716TAR

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00212015 Detail

BC32716TAR: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

BC32716TAR Data Sheet

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Part Number:
BC32716TAR
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.8 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo    

Description

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 45 V
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 0.8 A
Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo


Parameters:

Technical/Catalog InformationBC32716TAR
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)800mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC32716TAR
BC32716TAR



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