BC517,112

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Mounting Type: Through Hole
Power - Max: 625mW
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Frequency - Transition: 220MHz
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V


Parameters:

Technical/Catalog Information	BC517,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 20mA, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 100A, 100mA
Frequency - Transition	220MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC517,112 BC517,112