BC556B

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 110
Packaging : Bulk
Maximum Operating Frequency : 150 MHz
Collector- Emitter Voltage VCEO Max : 65 V


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage BC556 BC557 BC558	VCEO	65 45 30	Vdc
CollectorBase Voltage BC556 BC557 BC558	VCBO	80 50 30	Vdc
Emitter-Base Voltage	VEBO	-5.0	Vdc
Collector Current Continuous Peak	IC ICM	100 200	mAdc
Base Current Peak	IBM	-200	mAdc
Total Device Dissipation@ TA = 25 Derate above 25	PD	625 5.0	Watt mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD	1.5 12	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG	55 to +150

Parameters:

Technical/Catalog Information	BC556B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500A, 10mA
Frequency - Transition	280MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC556B BC556B BC556BOS ND BC556BOSND BC556BOS