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BC556BZL1G: Transistors Bipolar (BJT) 100mA 80V PNP

BC556BZL1G Data Sheet

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Part Number:: BC556BZL1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	65 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	180 at 2 mA at 5 V	Configuration :	Single
Maximum Operating Frequency :	280 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Ammo
Maximum Operating Frequency : 280 MHz
Collector- Emitter Voltage VCEO Max : 65 V
DC Collector/Base Gain hfe Min : 180 at 2 mA at 5 V

Parameters:

Technical/Catalog Information	BC556BZL1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500A, 10mA
Frequency - Transition	280MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC556BZL1G BC556BZL1G

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BC556BZL1G

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