BC558C

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 110
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 30 V
Maximum Operating Frequency : 150 MHz


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage BC556 BC557 BC558	VCEO	65 45 30	Vdc
CollectorBase Voltage BC556 BC557 BC558	VCBO	80 50 30	Vdc
Emitter-Base Voltage	VEBO	-5.0	Vdc
Collector Current Continuous Peak	IC ICM	100 200	mAdc
Base Current Peak	IBM	-200	mAdc
Total Device Dissipation@ TA = 25 Derate above 25	PD	625 5.0	Watt mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD	1.5 12	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG	55 to +150

Parameters:

Technical/Catalog Information	BC558C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	100mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500A, 10mA
Frequency - Transition	150MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC558C BC558C