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BC618,112: TRANS DARL NPN 55V 500MA TO-92

BC618,112 Data Sheet

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Part Number:: BC618,112
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Supply Ability:: 5000

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Upload time: 2025/12/5

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Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	NPN - Darlington	Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	55V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	1.1V @ 200µA, 200mA
Current - Collector Cutoff (Max):	50µA	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 200mA, 5V	Power - Max:	625mW
Frequency - Transition:	155MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92-3

Description

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Current - Collector (Ic) (Max): 500mA
Mounting Type: Through Hole
Power - Max: 625mW
Transistor Type: NPN - Darlington
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector Cutoff (Max): 50µA
Supplier Device Package: TO-92-3
Frequency - Transition: 155MHz
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V

Parameters:

Technical/Catalog Information	BC618,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	55V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 200mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 200A, 200mA
Frequency - Transition	155MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC618,112 BC618,112

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BC618,112

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