Transistors Bipolar (BJT) TO-92 NPN GP AMP
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage BC635 BC637 BC639 |
open emitter | - - - |
45 60 100 |
V V V |
VCEO | collector-emitter voltage BC635 BC637 BC639 |
open base | - - - |
45 60 80 |
V V V |
VEBO | emitter-base voltage | open collector | - | 5 | V |
IC | collector current (DC) | - | 1 | A | |
ICM | peak collector current | - | 1.5 | A | |
IBM | peak base current | - | 200 | mA | |
Ptot | total power dissipation | Tamb 25 °C | - | 0.83 | W |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 | ||
Tamb | operating ambient temperature | -65 | +150 |
Technical/Catalog Information | BC635 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transition | 100MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BC635 BC635 |