BC846A

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

• Ideally Suited for Automatic Insertion
• Complementary PNP Types Available (BC856-BC858)
• For Switching and AF Amplifier Applications
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability




Specifications

Part Number	BC846A
Product Type	NPN
VCEO (V)	65
IC (A)	0.1
ICM (A)	0.2
PD (W)	0.3
hFE Min	110
hFE Max	220
@ IC (A)	0.002
VCE (SAT) Max (mV)	250
@ IC (A)	0.01
@ IB (mA)	0.5
fT Min (MHz)	300
RCE (SAT) (m)	-

Characteristic		Symbol	Value	Unit
Collector-Base Voltage	BC846 BC847 BC848	VCBO	80 50 30	V
Collector-Emitter Voltage	BC846 BC847 BC848	VCEO	65 45 30	V
Emitter-Base Voltage	BC846 BC847 BC848	VEBO	6.0 5.0	V
Collector Current Peak Collector Current Peak Emitter Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range		IC ICM IEM Pd RJA Tj, TSTG	100 200 200 300 417 -65 to +150	mA mA mA mW °C/W °C

Description

BC846A is a type of NPN silicon AF transistor which has two unique features: (1) for AF input stages and driver applications; (2): high current gain; (3): low collector-emitter saturation voltage; (4): low noise between 30 Hz and 15 kHz; (5): complementary types: BC856, BC857, BC858,BC859, BC860 (PNP).

There are some maximum ratings about BC846A.(1): collector-emitter voltage(VCEO) is 65 Vdc; (2): collector-base voltage(VCBO)is 80 Vdc; (3): emitter-base voltage(VEBO) is 6.0 Vdc; (4): collector current-continuous(Ic) is 100 mAdc; (5): total power dissipation(Ptot) is 330 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides, there are still some electrical characteristics about BC846A when Ta is 25 unless otherwise noted.Off characteristics: (1): collector-base cutoff current(ICBO) is 15 nA max when VCB is 40 V and IE is 0; (2): collector-mitter breakdown voltage(V(BR)CES) is 80 V; (3): DC current gain(hFE) is 110 min,180 typ and 220 max when VCE is 5 V and Ic is 2 mA;(4): collector emitter saturation voltage(VCE(sat)) is 90 mV typ and 250 mV max when Ic is 10 mA and IB is 0.5 mA; (5): collector base saturation voltage(VBE(sat)) is 900 mV max when Ic is 100 mA and IB is 5 mA; (6): emitter-base breakdown voltage(V(BR)EBO) is 6 V min when IFE is 1 uA and Ic is 0; (7): base-emitter turn on voltage(VBE(ON)) is 770 mV max when Ic is 10 mA and VCE is 5 V.