BC846B

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Specifications

Part Number	BC846B
Product Type	NPN
VCEO (V)	65
IC (A)	0.1
ICM (A)	0.2
PD (W)	0.3
hFE Min	200
hFE Max	450
@ IC (A)	0.002
VCE (SAT) Max (mV)	250
@ IC (A)	0.01
@ IB (mA)	0.5
fT Min (MHz)	300
RCE (SAT) (m)	-

Description

The BC846B belongs to the BC846 series. It is a kind of NPN silicon AF transistor and is available in SOT23 package. It is designed for AF input stages and driver applications.

There are some features of BC846B as follows. (1) high current gain; (2) low collector-emitter saturation voltage; (3) low noise between 30 Hz and 15 kHz; (4) BC856,BC857 and BC858 are its complementary types.

What comes next is BC846B maximum ratings. (1): collector-emitter voltage (VCEO) is 65 V; (2): vollector-base voltage (VCBO) is 80 V; (3): collector-emitter voltage (VCES) is 80 V; (4): emitter-base voltage (VEBO) is 6 V; (5): DC collector current (IC) is 100 mA; (6): peak collector current (ICM) is 200 mA,peak base current (IBM) is 200 mA and peak emitter current (IEM) is 200 mA; (7): total power dissipation at TS is 71 is 330 mW; (8): junction temperature (Tj) is 150 ; (9): storage temperature (Tstg) is from -65 to 150 . Then is about its DC characteristics at TA is 25 . (1): the minimum collector-emitter breakdown voltage (VBRCEO) is 65 V when IC is 10 mA and IB is 0; (2): the minimum collector-base breakdown voltage (VBRCBO) is 80 V at IC is 10 A and IE is 0; (3): the minimum emitter-base breakdown voltage (VBREBO) is 6 V at IE is A and IC is 0; (4): the maximum collector cutoff current (ICBO) is 5 A when VCB is 40 V and IE is 0; (5): the typical DC current gain is 180,the minimum is 110 and the maximum is 220 at IC is 2 mA and VCE is 5 V; (6): the typical collector-emitter saturation voltage (VCEsat) is 90 mV and the maximum is 250 mV when IC is 10 mA and IB is 0.5 mA.

Parameters:

Technical/Catalog Information	BC846B
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
Power - Max	310mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 500A, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Cut Tape (CT)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC846B BC846B BC846BCT ND BC846BCTND BC846BCT