Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
BC847BS: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V |
| Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.1 A |
| DC Collector/Base Gain hfe Min : | 110 | Configuration : | Single |
| Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SC-70-6 |
| Packaging : | Reel |

| Characteristic |
SYMBOL |
Value |
UNIT |
| Collector-base Voltage |
VCBO |
50 |
V |
| Collector-emitter Voltage |
VCEO |
45 |
V |
| Emitter-base Voltage |
VEBO |
5.0 |
V |
| Collector Current (DC) |
IC |
100 |
mA |
| peak collector current |
ICM |
200 |
mA |
| peak base current |
IBM |
200 |
mA |
| Power Dissipation (Note 1) |
Pd |
200 |
mW |
| Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
500 |
/W |
| Operating and Storage Temperature Range |
Tj, TSTG |
-55 to +125 |
| Technical/Catalog Information | BC847BS |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 310mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500A, 10mA |
| Frequency - Transition | 300MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BC847BS BC847BS |