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BC847BVN

Features: · 300 mW total power dissipation· Very small 1.6 mm x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area· Reduced required PCB area· Reduced pick and place costs.Application· General purpose switching and...

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SeekIC No. : 004297381 Detail

BC847BVN: Features: · 300 mW total power dissipation· Very small 1.6 mm x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area...

BC847BVN Data Sheet

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Part Number:
BC847BVN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 mm x 1.2 mm ultra thin package
· Excellent coplanarity due to straight leads
· Replaces two SC-75/SC-89 packaged transistors on same PCB area
· Reduced required PCB area
· Reduced pick and place costs.




Application

· General purpose switching and amplification
· Switch mode power supply complementary MOSFET driver
· Complementary driver for audio amplifiers.




Pinout

Connection Diagram




Specifications

Part Number BC847BVN
Product Type NPN + PNP
VCEO (V) 45
-45
IC(A) 0.1
-0.1
ICM (A) 0.2
-0.2
PD (W) 0.15
hFE Min 200
220
hFE Max 450
475
@I C (A) 0.002
-0.002
VCE(SAT) Max (mV) 250
-300
@ IC (A) 0.01
-0.01
@ IB (mA) 0.5
-0.5
fT Min (MHz) 300
200
RCE (SAT) (m) -


SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO Collector-base Voltage
open emitter
-
50
V
VCEO Collector-emitter Voltage
open base
-
45
V
VEBO Emitter-base Voltage
open collector
-
5
V
IC Collector Current (DC)
-
100
mA
ICM peak collector current
-
200
mA
IBM peak base current
-
200
mA
Ptot total power dissipation
Tamb 25 °C
-
200
mW
Tstg storage temperature
-65
+150
Tj junction temperature
-
150
Tamb operating ambient temperature
-65
+15
Per device
Ptot total power dissipation
Tamb 25; note 1
-
300
mW

Note
1. Device mounted on an FR4 printed-circuit board.








Description

NPN/PNP transistor BC847BVN pair in a SOT666 plastic package.




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