BC847B/50V0.1A

The BC847B is designed as one kind of SOT23 NPN silicon planar general purpose transistors. The absolute maximum ratings of the BC847B can be summar-ized as:(1)collector-base voltage:50 V;(2)collector-emitter voltage:50 V;(3)emitter-base voltage:6 V;(4)continuous collector current:100 mA;(5)peak collector current:200 mA;(6)peak base current:200 mA;(7)peak emitter current:200 mA;(8)power dissipation at Tamb=25°C:330 mW;(9)operating and storage temperature range:-55 to +150 °C.

And the electrical characteristics (at Tamb=25°c unless otherwise stated) of the BC847B can be summarized as:(1)collector cut-off current (VCB=30V):15 nA;(2)collector cut-off current (VCB=30V Tamb=150°C):5 uA;(3)collector-emitter saturation voltage (Ic=10mA, IB=0.5mA):90 mV;(4)collector-emitter saturation voltage (IC=100mA, IB=5mA):200 mV;(5)base-emitter saturation voltage (Ic=10mA, IB=0.5mA):700 mV;(6)base-emitter saturation voltage (IC=100mA, IB=5mA):900 mV. If you want to know more information such as the electrical characteristics about the BC847B, please download the datasheet in www.seekic.com or www.chinaicmart.com .