BC847UF

PinoutDescriptionBipolar transistors BC847UF, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron) The BC847UF is a kind of NPN silicon transistor....

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SeekIC No. : 004297393 Detail

BC847UF: PinoutDescriptionBipolar transistors BC847UF, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar becaus...

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Part Number:
BC847UF
Supply Ability:
5000

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  • Qty
  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Description

Bipolar transistors BC847UF, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)

The BC847UF is a kind of NPN silicon transistor. It is widely used in switching application and some other general purpose applications. There are some features as follows: (1)high voltage : VCEO=45 V; (2)complementary pair with BC857UF.

The following is about the absolute maximum ratings of BC847UF: (1)collector-Base voltage, VCBO: 50 V; (2)collector-Emitter voltage, VCEO: 45 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 100 mA; (5)collector dissipation, PC: 200 mW; (6)junction temperature, Tj: 150; (7)storage temperature, Tstg: -55 to 150.

The last one is about the electrical characteristics of BC847UF: (1)collector-Emitter breakdown voltage, BVCEO at IC=1 mA, IB=0: 45 V min; (2)base-Emitter turn on voltage, VBE(ON) at VCE=5 V, IC=2 mA: 550 mV min and 700 mV max; (3)base-Emitter saturation voltage, VBE(sat) at IC=100 mA, IB=5 mA: 900 mV typ; (4)collector-Emitter saturation voltage, VCE(sat) at IC=100 mA, IB=5 mA: 600 mV max; (5)collector cut-off current, ICBO at VCB=35V, IE=0: 15 nA max; (6)DC current gain, hFE at VCE=5 V, IC=2 mA: 110 min and 800 max; (7)transition frequency, fT at VCE=5 V, IC=10 mA, f=100MHz: 150 MHz typ; (8)collector output capacitance, Cob at VCB=10V, IE=0, f=1MHz: 4.5 pF max; (9)noise figure, NF at VCE=5V, IC=200A, f=1KHz, Rg=2 K: 10 dB max.






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