BC848B

Transistors Bipolar (BJT) Transistor 200mW

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SeekIC No. : 00208635 Detail

BC848B: Transistors Bipolar (BJT) Transistor 200mW

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Part Number:
BC848B
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • Unit Price
  • $.01
  • $.01
  • Processing time
  • 15 Days
  • 15 Days
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Upload time: 2024/4/28

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Product Details

Quick Details

Packaging : Reel    

Description

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Specifications

Part Number BC848B
Product Type NPN
VCEO (V) 30
IC(A) 0.1
ICM (A) 0.2
PD (W) 0.3
hFE Min 200
hFE Max 450
@I C (A) 0.002
VCE(SAT) Max (mV) 250
@ IC (A) 0.01
@ IB (mA) 0.5
fT Min (MHz) 300
RCE (SAT) (m) -





Description

Features of the BC848B are:(1)BVCEO < 30V (IC=1mA);(2)complements the BC858B/BC858BW.

The absolute maximum ratings of the BC848B can be summarized as:(1):the parameter is collector-base voltage,the symbol is VCBO,the limits is 30,the unit is V;(2):the parameter is collector-emitter voltage,the symbol is VCEO,the limits is 30,the unit is V;(3):the parameter is emitter-base voltage,the symbol is VEBO,the limits is 5,the unit is V;(4):the parameter is collector current,the symbol is IC,the limits is 0.1,the unit is A;(5):the parameter is collector power dissipation,the symbol is PC,the limits is 0.2,the unit is W;(6):the parameter is collector power dissipation,the symbol is PC,the limits is 0.35,the unit is W;(7):the parameter is junction temperature,the symbol is Tj,the limits is 150,the unit is ;(8):the parameter is storage temperature,the symbol is Tstg,the limits is -55 to +150,the unit is .

The electrical characteristics of the BC848B can be summarized as:(1):the parameter is collector-base breakdown voltage,the symbol is BVCBO,the Min is 30,the unit is V;(2):the parameter is collector-emitter breakdown voltage,the symbol is BVCEO,the Min is 30,the unit is V;(3):the parameter is emitter-base breakdown voltage,the symbol is BVEBO,the Min is 5,the unit is V;(4):the parameter is collector cutoff current,the symbol is ICBO,the Max is 15,5,the unit is A;(5):the parameter is collector-emitter saturation voltage,the symbol is VCE(sat),the Max is 0.25,0.6,the unit is V;(6):the parameter is base-emitter saturation voltage,the symbol is VBE(on),the Min is 0.58,the Max is 0.77,the unit is V;(7):the parameter is DC current transfer ratio,the symbol is hFE,the Min is 220,the Max is 450;(8):the parameter is DC current transfer ratio,the symbol is hFE,the Min is 420,the Max is 800;(9):the parameter is transition frequency,the symbol is fT,the Typ is 200,the unit is MHz;(10):the parameter is collectoroutput capacitance,the symbol is Cob,the Typ is 3,the unit is pF;(11):the parameter is collector output capacitance,the symbol is Cib,the Typ is 8,the unit is pF.






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