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BC857BV

Features: · 300 mW total power dissipation· Very small 1.6 mm ´ 1.2 mm ´ 0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Improved thermal behaviour due to flat leads· Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors· Redu...

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SeekIC No. : 004297444 Detail

BC857BV: Features: · 300 mW total power dissipation· Very small 1.6 mm ´ 1.2 mm ´ 0.55 mm ultra thin package· Excellent coplanarity due to straight leads· Improved thermal behaviour due to flat l...

BC857BV Data Sheet

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Part Number:
BC857BV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 mm ´ 1.2 mm ´ 0.55 mm ultra thin package
· Excellent coplanarity due to straight leads
· Improved thermal behaviour due to flat leads
· Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
· Reduces required board space
· Reduces pick and place costs.




Application

· General purpose switching and amplification.




Pinout

Connection Diagram Connection Diagram




Specifications

Part Number BC857BV
Product Type PNP + PNP
VCEO (V) -45
IC(A) -0.1
ICM (A) -
PD (W) 0.15
hFE Min 220
hFE Max 475
@I C (A) -0.002
VCE(SAT) Max (mV) -100
@ IC (A) -0.01
@ IB (mA) -0.5
fT Min (MHz) 100
RCE (SAT) (m) -





Description

PNP double transistor BC857BV in a SOT666 plastic package. NPN complement: BC847BV




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