BC857C

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Specifications

Part Number	BC857C
Product Type	PNP
VCEO (V)	-45
IC(A)	-0.1
ICM (A)	-0.2
PD (W)	0.3
hFE Min	420
hFE Max	800
@I C (A)	-0.002
VCE(SAT) Max (mV)	-300
@ IC (A)	-0.01
@ IB (mA)	-0.5
fT Min (MHz)	200
RCE (SAT) (m)	-

Description

The BC857C is a type of PNP general purpose transistors with two unique features:(1)low current;(2)low voltage.

There are some limiting values about BC857C.(1):emitter-base voltage open collector(VEBO) is 5 V max;(2):collector current (DC)(IC) is 100 mA max;(3):peak collector current(ICM) is 200 mA max;(4)peak base current(IBM) is 200 mA max;(5):total power dissipation(Ptot) is 250 mW max when Tamb is not higher than 25 °C;(6):storage temperature(Tstg) is -65°C min and +150°C max;(7):junction temperature(Tj) is 150°C max;(8):operating ambient temperature(Tamb) is -65°C min and +150°C max.

At the same time, there are also some characteristics about BC857C when Tj is 25°C unless otherwise specified.(1):collector cut-off current(ICBO) is -1 nA typ and -15 nA max when IE is 0,VCB is -30 V;(2):emitter cut-off current(IEBO) is 100 nA max when Ici s 0 and VEB is -5 V;(3):cllector-emitter saturation voltage(VCEsat) is -75 mV typ and -300 mV max when IC is -10 mA and IB is -0.5 mA;(4):base-emitter voltage(VBE) is -600 mV min,-650 mV typ and -750 mV max when IC is -2 mA,VCE is -5 V .