BC858B

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Specifications

Part Number	BC858B
Product Type	PNP
VCEO (V)	-30
IC(A)	-0.1
ICM (A)	-0.2
PD (W)	0.3
hFE Min	220
hFE Max	475
@I C (A)	-0.002
VCE(SAT) Max (mV)	-300
@ IC (A)	-0.01
@ IB (mA)	-0.5
fT Min (MHz)	200
RCE (SAT) (m)	-

Description

Features of the BC858B are:(1)silicon epitaxialplanar pnp transistors;(2)miniatureplastic package for applicationin surface mounting circuits;(3)verylow noise af amplifier;(4)npn complements for bc857 is BC847.

The absolute maximum ratings of the BC858B can be summarized as:(1):the symbol of BC858B is VCES,the parameter is collector-emitter voltage (VBE=0),the value is -30,the unit is V;(2):the symbol is VCBO,the parameter is collector-bose voltage (IE=0),the value is -30,the unit is V;(3):the symbol is VCEO,the parameter is collector-emitter voltage (IB=0),the value is -30,the unit is V;(4):the symbol is VEBO,the parameter is emitter-base voltage (IC=0),the value is -5,the unit is V;(5):the symbol is IC,the parameter is collector current,the value is -0.1,the unit is A;(6):the symbol is ICM,the parameter is collector peak current,the value is -0.2,the unit is A;(7):the symbol of BC858B is IBM,the parameter is base peak current,the value is -0.2,the unit is A;(8):the symbol is IEM,the parameter is emitter peak current,the value is -0.2,the unit is A;(9):the symbol is Ptot,the parameter is total dissipation at Tc = 25,the value is 300,the unit is mW;(10):the symbol is Tstg,the parameter is storage temperature,the value of BC858B is -65 to 150,the unit is ;(11):the symbol is Tj,the parameter is Max. operating junction temperature,the value is 150,the unit is .