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BC879,112: TRANS DARL NPN 80V 1A TO-92

BC879,112 Data Sheet

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Part Number:: BC879,112
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Supply Ability:: 5000

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Upload time: 2025/12/25

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Recent History
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Product Details

Quick Details

Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	NPN - Darlington	Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V	Resistor - Base (R1) (Ohms):	-
Capacitance :	4 pF	Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max):	50nA	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 500mA, 10V	Power - Max:	830mW
Frequency - Transition:	200MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92-3

Description

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 200MHz
Voltage - Collector Emitter Breakdown (Max): 80V
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Current - Collector Cutoff (Max): 50nA
Current - Collector (Ic) (Max): 1A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 830mW
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A

Parameters:

Technical/Catalog Information	BC879,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	830mW
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500A, 500mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	50nA
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC879,112 BC879,112

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