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BC879,112

TRANS DARL NPN 80V 1A TO-92

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SeekIC No. : 003436345 Detail

BC879,112: TRANS DARL NPN 80V 1A TO-92

BC879,112 Data Sheet

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Part Number:
BC879,112
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: NXP Semiconductors
Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): -
Capacitance : 4 pF Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 50nA Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 830mW
Frequency - Transition: 200MHz Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3    

Description

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 200MHz
Voltage - Collector Emitter Breakdown (Max): 80V
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Current - Collector Cutoff (Max): 50nA
Current - Collector (Ic) (Max): 1A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 830mW
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A


Parameters:

Technical/Catalog InformationBC879,112
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)1A
Power - Max830mW
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic1.3V @ 500A, 500mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)50nA
Mounting TypeThrough Hole
Package / CaseTO-92-3
PackagingBulk
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC879,112
BC879,112



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