Transistors Bipolar (BJT) NPN Medium Voltage
BCP55-16: Transistors Bipolar (BJT) NPN Medium Voltage
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
| DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
| Maximum Operating Frequency : | 120 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-223 |
| Packaging : | Reel |
| Parameter | Symbol | BCP54 | BCP55 | BCP56 | Unit |
| Collector-emitter voltage | VCEO |
45 |
60 | 80 |
V |
| Collector-emitter voltage RBE 1k | VCER | 45 | 60 | 100 | |
| Collector-base voltage | VCBO | 45 | 60 | 100 | |
| Emitter-base voltage | VEBO | 5 | 5 | 5 | |
| DC collector current | IC | 1 |
A | ||
| Peak collector current | ICM | 1.5 | |||
| Base current | IB | 100 |
mA | ||
| Peak base current | IBM | 200 | |||
| Total power dissipation, TS = 124 °C | Ptot | 1.5 |
W | ||
| Junction temperature | Tj | 150 |
oC | ||
| Storage temperature | Tstg | -65...150 | |||