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- Table of contents:
BCR103
-
Suppliers
DataSheet
General Description
BCR103 Maximum Ratings
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage |
VCEO |
50 |
V
|
| Collector-base voltage |
VCBO |
50 | |
| Emitter-base voltage |
VEBO |
5 | |
| Input on Voltage |
Vi(on) |
10 | |
| DC collector current |
IC |
100 |
mA |
| Total power dissipation- BCR103, TS 102°C BCR103F, T S 128°C BCR103L3, TS 135°C BCR103T, T S 109°C BCR103U, TS 118°C |
Ptot |
200 250 250 250 250 |
mW |
| Junction temperature |
Tj |
150 |
oC |
| Storage temperature |
Tstg |
-65 ... 150 |
BCR103
PDF/DataSheet Download
- Datasheet: BCR103
- File Size: 202776 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- LOW POWER USE PLANAR PASSIVATION TYPE
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- ·BCR08AS
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 64746 KB
- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 103790 KB
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- SIEMENS [Siemens Semiconductor Group]
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- 54090 KB
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- SIEMENS [Siemens Semiconductor Group]
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- INFINEON [Infineon Technologies AG]
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- ·BCR101F
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- NPN Silicon Digital Transistor
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- ·BCR101L3
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