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- Table of contents:
BCR108S
-
Suppliers
DataSheet
General Description
BCR108S Maximum Ratings
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage |
VCEO |
50 |
V
|
| Collector-base voltage |
VCBO |
50 | |
| Emitter-base voltage |
VEBO |
5 | |
| Input on Voltage |
Vi(on) |
10 | |
| DC collector current |
IC |
100 |
mA |
| Total power dissipation- BCR108, T S 102°C BCR108F, TS 128°C BCR108L3, TS 135°C BCR108S, T S 115°C BCR108T, T S 109°C BCR108W, T S 124°C |
Ptot |
200 250 250 250 250 250 |
mW |
| Junction temperature |
Tj |
150 |
oC |
| Storage temperature |
Tstg |
-65 ... 150 |
BCR108S
PDF/DataSheet Download
- Datasheet: BCR108S
- File Size: 502908 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- LOW POWER USE PLANAR PASSIVATION TYPE
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- ·BCR08AS
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 64746 KB
- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 54090 KB
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- NPN Silicon Digital Transistor
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- ·BCR101F
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- ·BCR101L3
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
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