BCR108S E6327

The BCR108S-E6327 is designed as one kind of NPN silicon digital transistor array.It is one member of the BCR108S series.Features of the BCR108S-E6327 are three points:(1)two (galvanic) internal isolated transistors in on package;(2)built in bias resistor (R1=2.2kW,R2=47kW);(3)switching circuit, inverter, interface circuit,driver circuit.

The absolute maximum ratings of the BCR108S-E6327 can be summarized as:(1)collector-emitter voltage:50 V;(2)collector-base voltage:50 V;(3)emitter-base voltage:5 V;(4)input on Voltage:10 V;(5)DC collector current:100 mA;(6)total power dissipation,TS=115°C:250 mW;(7)junction temperature:150 °C;(8)storage temperature:-65 to +150°C;(9)junction ambient:</=275 K/W;(10)junction-soldering point:</=140 K/W.

The electrical characteristics at TA=25°C(unless otherwise specified) of the BCR108S-E6327 can be summarized as:(1)collector-emitter breakdown voltage: 50 V;(2)collector-base breakdown voltage:50 V;(3)collector cutoff current:100 nA;(4)emitter cutoff current:164 nA;(5)DC current gain:70 nA;(6)collector-emitter saturation voltage:0.3 V;(7)input off voltage:0.4 to 0.8 V;(8)input on voltage:0.5 to 1.1 V;(9)input resistor:1500 to 2900.If you want to know more information such as the electrical AC characteristics about the BCR108S-E6327,please download the datasheet in www.seekdatasheet.com .